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IXTQ52P10P

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IXTQ52P10P

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 4.5V @ 250µA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : TO-3P-3, SC-65-3

Gate Charge (Qg) (Max) @ Vgs : 60 nC @ 10 V

Rds On (Max) @ Id, Vgs : 50mOhm @ 52A, 10V

FET Type : P-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Tube

Drain to Source Voltage (Vdss) : 100 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 2845 pF @ 25 V

Mounting Type : Through Hole

Series : PolarP™

Supplier Device Package : TO-3P

Mfr : IXYS

Current - Continuous Drain (Id) @ 25°C : 52A (Tc)

Power Dissipation (Max) : 300W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : IXTQ52

Description : MOSFET P-CH 100V 52A TO3P

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P-Channel 100 V 52A (Tc) 300W (Tc) Through Hole TO-3P

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