Sign In | Join Free | My frbiz.com
China Beijing Silk Road Enterprise Management Services Co.,LTD logo
Beijing Silk Road Enterprise Management Services Co.,LTD
Beijing Silk Road Enterprise Management Services Co.,LTD
Verified Supplier

2 Years

Home > Single FETs, MOSFETs >

IRF200P223

Product Categories
Beijing Silk Road Enterprise Management Services Co.,LTD
Trust Seal
Verified Supplier
Credit Check
Supplier Assessment
Contact Now

IRF200P223

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 4V @ 270µA

Operating Temperature : -55°C ~ 175°C (TJ)

Package / Case : TO-247-3

Gate Charge (Qg) (Max) @ Vgs : 102 nC @ 10 V

Rds On (Max) @ Id, Vgs : 11.5mOhm @ 60A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Tube

Drain to Source Voltage (Vdss) : 200 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 5094 pF @ 50 V

Mounting Type : Through Hole

Series : StrongIRFET™

Supplier Device Package : TO-247AC

Mfr : Infineon Technologies

Current - Continuous Drain (Id) @ 25°C : 100A (Tc)

Power Dissipation (Max) : 313W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : IRF200

Description : MOSFET N-CH 200V 100A TO247AC

Contact Now

N-Channel 200 V 100A (Tc) 313W (Tc) Through Hole TO-247AC
China IRF200P223 wholesale

IRF200P223 Images

Inquiry Cart 0
Send your message to this supplier
 
*From:
*To: Beijing Silk Road Enterprise Management Services Co.,LTD
*Subject:
*Message:
Characters Remaining: (0/3000)