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IPB030N08N3GATMA1

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IPB030N08N3GATMA1

Product Category : MOSFET

Vgs (Max) : ±20V

Current - Continuous Drain (Id) @ 25°C : 160A (Tc)

FET Type : N-Channel

Mounting Type : Surface Mount

Gate Charge (Qg) (Max) @ Vgs : 117nC @ 10V

Manufacturer : Infineon Technologies

Minimum Quantity : 1000

Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V

Operating Temperature : -55°C ~ 175°C (TJ)

FET Feature : -

Series : OptiMOS™

Input Capacitance (Ciss) (Max) @ Vds : 8110pF @ 40V

Supplier Device Package : PG-TO263-7

Part Status : Active

Packaging : Tape & Reel (TR)

Rds On (Max) @ Id, Vgs : 3 mOhm @ 100A, 10V

Power Dissipation (Max) : 214W (Tc)

Package / Case : TO-263-7, D²Pak (6 Leads + Tab), TO-263CB

Technology : MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id : 3.5V @ 155µA

Drain to Source Voltage (Vdss) : 80V

Description : MOSFET N-CH 80V 160A TO263-7

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The IPB030N08N3GATMA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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