Sign In | Join Free | My frbiz.com |
|
Transistor Polarity : N-Channel
Technology : GaN
Product Category : RF JFET Transistors
Mounting Style : SMD/SMT
Gain : 18.5 dB
Transistor Type : HEMT
Output Power : 60 W
Package / Case : QSOP-20
Maximum Operating Temperature : + 90 C
Vds - Drain-Source Breakdown Voltage : 150 V
Packaging : Reel
Maximum Drain Gate Voltage : -
Id - Continuous Drain Current : 6.3 A
Vgs - Gate-Source Breakdown Voltage : - 10 V to + 2 V
Pd - Power Dissipation : -
Manufacturer : Wolfspeed / Cree
Description : RF JFET Transistors GaN HEMT DC-2.7GHz, 60 Watt
![]() |
CGHV27060MP Images |
Thank you! Your message has been sent to the following suppliers.