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PMBFJ309,215

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PMBFJ309,215

Transistor Polarity : N-Channel

Technology : Si

Product Category : RF JFET Transistors

Mounting Style : SMD/SMT

Transistor Type : JFET

Pd - Power Dissipation : 250 mW

Package / Case : SOT-23

Maximum Operating Temperature : + 150 C

Vds - Drain-Source Breakdown Voltage : 25 V

Packaging : Reel

Maximum Drain Gate Voltage : - 25 V

Id - Continuous Drain Current : 30 mA

Vgs - Gate-Source Breakdown Voltage : - 25 V

Manufacturer : NXP Semiconductors

Description : RF JFET Transistors TAPE7 FET-RFSS

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The PMBFJ309,215,from NXP Semiconductors,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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