Sign In | Join Free | My frbiz.com |
|
Transistor Polarity : N-Channel
Technology : GaN SiC
Product Category : RF JFET Transistors
Mounting Style : SMD/SMT
Gain : 13.5 dB
Transistor Type : HEMT
Output Power : 5 W
Package / Case : SOT89-3
Maximum Operating Temperature : + 95 C
Vds - Drain-Source Breakdown Voltage : 50 V
Packaging : Reel
Id - Continuous Drain Current : 0.3 A
Pd - Power Dissipation : 12 W
Manufacturer : MACOM
Description : RF JFET Transistors DC-4 GHz Gain 13.5dB GaN SiC
![]() |
MAGX-000040-0050TP Images |
Thank you! Your message has been sent to the following suppliers.