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NPTB00004A

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NPTB00004A

Transistor Polarity : N-Channel

Technology : GaN Si

Product Category : RF JFET Transistors

Mounting Style : SMD/SMT

Gain : 16 dB

Transistor Type : HEMT

Pd - Power Dissipation : 11.6 W

Package / Case : SOIC

Maximum Operating Temperature : + 200 C

Vds - Drain-Source Breakdown Voltage : 100 V

Packaging : Tray

Id - Continuous Drain Current : 2 mA

Vgs - Gate-Source Breakdown Voltage : 3 mA

Manufacturer : MACOM

Description : RF JFET Transistors DC-6.0GHz 5W Gain 16dB GaN HEMT

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The NPTB00004A,from MACOM,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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