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ATF-511P8-TR1

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ATF-511P8-TR1

Vgs - Gate-Source Breakdown Voltage : - 5 V to 1 V

Technology : GaAs

Product Category : RF JFET Transistors

Mounting Style : SMD/SMT

Gain : 14.8 dB

Transistor Type : EpHEMT

Pd - Power Dissipation : 3 W

Package / Case : LPCC-8

Maximum Operating Temperature : + 150 C

Vds - Drain-Source Breakdown Voltage : 7 V

Packaging : Reel

Maximum Drain Gate Voltage : - 5 V to + 1 V

Id - Continuous Drain Current : 1 A

Manufacturer : Avago / Broadcom

Description : RF JFET Transistors Transistor GaAs High Linearity

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The ATF-511P8-TR1,from Avago / Broadcom,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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