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IRFL1006PBF

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IRFL1006PBF

Product Category : MOSFET

Vgs (Max) : ±20V

Current - Continuous Drain (Id) @ 25°C : 1.6A (Ta)

FET Type : N-Channel

Mounting Type : Surface Mount

Gate Charge (Qg) (Max) @ Vgs : 8nC @ 10V

Manufacturer : Infineon Technologies

Minimum Quantity : 2560

Drive Voltage (Max Rds On, Min Rds On) : 10V

Operating Temperature : -55°C ~ 150°C (TJ)

FET Feature : -

Series : HEXFET®

Input Capacitance (Ciss) (Max) @ Vds : 160pF @ 25V

Supplier Device Package : SOT-223

Part Status : Obsolete

Packaging : Tube

Rds On (Max) @ Id, Vgs : 220 mOhm @ 1.6A, 10V

Power Dissipation (Max) : 1W (Ta)

Package / Case : TO-261-4, TO-261AA

Technology : MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id : 4V @ 250µA

Drain to Source Voltage (Vdss) : 60V

Description : MOSFET N-CH 60V 1.6A SOT223

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